Ion-dependent electroluminescence from trivalent rare-earth doped n-ZnO/p-Si heterostructured light-emitting diodes

S. Iwan; J.L. Zhao; S.T. Tan; S. Bambang; M. Hikam; H.M. Fan; X.W. Sun

doi:10.1016/j.mssp.2014.09.048

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Ion-dependent electroluminescence from trivalent rare-earth doped n-ZnO/p-Si heterostructured light-emitting diodes

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S. Iwan, J.L. Zhao, S.T. Tan, S. Bambang, M. Hikam, H.M. Fan, X.W. Sun

2015 Materials Science in Semiconductor Processing Vol. 30 Article Cited by 41 SDG 17SDG 7

Abstract

We have demonstrated rare earths (REs) doped ZnO-based heterojunction light-emitting diodes (LEDs) on p-Si substrates by ultrasonic spray pyrolisis (USP). Room-temperature electroluminescence was clearly observed from reverse-biased n-ZnO:REs/p-Si diodes, which red and blue color emissions were realized from Eu and Tm ions, respectively. The narrow line-width emissions are attributed to the transitions within the shielded 4f levels of the trivalent REs ions that resulting from direct electron impact excitation during reverse bias. © 2014 Elsevier Ltd. All rights reserved.

Affiliations

Jurusan Fisika, FMIPA, Universitas Negeri Jakarta, Indonesia, Jl. Pemuda No. 10, Rawamangun, Jakarta, 13220, Indonesia; School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore, 639798, Singapore; Ilmu Material, FMIPA, Universitas Indonesia, Jl. Salemba Raya No. 4, Jakarta, 10430, Indonesia; Department of Physics, National University of Singapore, Blk S12, 2 Science Drive 3, Singapore, 117542, Singapore

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